Implanted Counted Dopant Ions

This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms ( 142 ) implanted in regions of a substrate ( 158 ) that are substantially intrinsic semiconductor. One or more doped surface regions ( 152 ) of the substrate ( 158 ) are metallised to form...

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Main Authors DZURAK ANDREW S, HOPF TOBY F, PRAWER STEVEN, JAMIESON DAVID N, ANDRESEN SOREN, GAUJA ERIC, HEARNE SEAN, MITIC MLADEN, YANG CHANGYI
Format Patent
LanguageEnglish
Published 01.11.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention concerns semiconductor devices of the general type comprising a counted number of dopant atoms ( 142 ) implanted in regions of a substrate ( 158 ) that are substantially intrinsic semiconductor. One or more doped surface regions ( 152 ) of the substrate ( 158 ) are metallised to form electrodes ( 150 ) and a counted number of dopant ions ( 142 ) are implanted in a region of the substantially intrinsic semiconductor.
Bibliography:Application Number: US20050596720