Bonded wafer and method of producing the same
A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active laye...
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Main Authors | , , |
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Format | Patent |
Language | English |
Published |
18.10.2007
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Online Access | Get full text |
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Abstract | A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer. |
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AbstractList | A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer. |
Author | HUJIE KAZUO ONO ISOROKU MORITA ETSUROU |
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Notes | Application Number: US20070716341 |
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SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | Bonded wafer and method of producing the same |
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