Bonded wafer and method of producing the same

A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active laye...

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Bibliographic Details
Main Authors HUJIE KAZUO, ONO ISOROKU, MORITA ETSUROU
Format Patent
LanguageEnglish
Published 18.10.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A bonded wafer is produced by bonding an ion-implanted wafer for an active layer onto a wafer for a supporting substrate, and thereafter exfoliating the wafer for the active layer at the ion-implanted position through a heat treatment and then polishing a terrace portion of the resulting active layer with a predetermined fixed grain abrasive cloth to remove island-shaped projections on the terrace portion while controlling a scattering of terrace width and smoothness of an outer peripheral face of the active layer.
Bibliography:Application Number: US20070716341