SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF
A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer electric charge stored on the photodiode, a first inter-layer insulating film made of SiO2, a first metallic wiring layer, a second inter-lay...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English |
Published |
13.09.2007
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Abstract | A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer electric charge stored on the photodiode, a first inter-layer insulating film made of SiO2, a first metallic wiring layer, a second inter-layer insulating film made of SiO2, a second metallic insulating layer, an undoped silicon glass (USG) film containing hydrogen, and a passivation film containing hydrogen, one by one. Dark currents are reduced by exhausting hydrogen atoms in the USG film and the passivation film for bonding it with dangling bonds on the surface of the Si semiconductor substrate, while applying heat treatments to the imaging device at a temperature of 400° C. or higher. |
---|---|
AbstractList | A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer electric charge stored on the photodiode, a first inter-layer insulating film made of SiO2, a first metallic wiring layer, a second inter-layer insulating film made of SiO2, a second metallic insulating layer, an undoped silicon glass (USG) film containing hydrogen, and a passivation film containing hydrogen, one by one. Dark currents are reduced by exhausting hydrogen atoms in the USG film and the passivation film for bonding it with dangling bonds on the surface of the Si semiconductor substrate, while applying heat treatments to the imaging device at a temperature of 400° C. or higher. |
Author | KANNO KATSUHIRO SASAKI SYU |
Author_xml | – fullname: SASAKI SYU – fullname: KANNO KATSUHIRO |
BookMark | eNrjYmDJy89L5WSwD_b38XTRDQ5xDHFV8PR1dPf0c1dwcQ3zdHZVcPRzUfB1DfHwd1Fw8w9S8HX0C3VzdA4JDQKpCfFwDXL1d-NhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGBuZGhkYWBiaOhsbEqQIALIAs3Q |
ContentType | Patent |
DBID | EVB |
DatabaseName | esp@cenet |
DatabaseTitleList | |
Database_xml | – sequence: 1 dbid: EVB name: esp@cenet url: http://worldwide.espacenet.com/singleLineSearch?locale=en_EP sourceTypes: Open Access Repository |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Medicine Chemistry Sciences |
ExternalDocumentID | US2007212804A1 |
GroupedDBID | EVB |
ID | FETCH-epo_espacenet_US2007212804A13 |
IEDL.DBID | EVB |
IngestDate | Fri Jul 19 11:55:22 EDT 2024 |
IsOpenAccess | true |
IsPeerReviewed | false |
IsScholarly | false |
Language | English |
LinkModel | DirectLink |
MergedId | FETCHMERGED-epo_espacenet_US2007212804A13 |
Notes | Application Number: US20070685406 |
OpenAccessLink | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070913&DB=EPODOC&CC=US&NR=2007212804A1 |
ParticipantIDs | epo_espacenet_US2007212804A1 |
PublicationCentury | 2000 |
PublicationDate | 20070913 |
PublicationDateYYYYMMDD | 2007-09-13 |
PublicationDate_xml | – month: 09 year: 2007 text: 20070913 day: 13 |
PublicationDecade | 2000 |
PublicationYear | 2007 |
RelatedCompanies | KABUSHIKI KAISHA TOSHIBA |
RelatedCompanies_xml | – name: KABUSHIKI KAISHA TOSHIBA |
Score | 2.6877408 |
Snippet | A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer... |
SourceID | epo |
SourceType | Open Access Repository |
SubjectTerms | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
Title | SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF |
URI | https://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20070913&DB=EPODOC&locale=&CC=US&NR=2007212804A1 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3dS8MwED_GFPVNp-LHlIDSt-K6dq19GNIl6Vqx7djSsbexdBkI0g1X8d83iZvuaW8hB8clcJ_53QXgsShaXCw6whS2kAnKvO1LnbNmpucKd2EtXK_gGm2RulHuvE46kxp8bHth9JzQbz0cUWpUIfW90vZ69V_EIhpbuX7i73Jr-RKyLjG22bGnxlwapNelg4xk2MC4m4-MdKhp0ko_t5xA5koHKpBWk_bpuKf6Ula7TiU8hcOB5FdWZ1ATZQOO8fbvtQYcJZsnb7ncaN_6XAbW2VtMzBELGEVxEvTjtI8IHceYoiAlKKEsygiSeR1KgjQPA8xyBXZALKJDmoUX8BBShiNTSjL9O_g0H-2KbV9CvVyW4gqQcAvuc8_lhaNwLXzW5n5rbrVVY7hlc3ENzX2cbvaTb-Hkt4Lpm5bdhHr1-SXupOut-L2-sR_x9YFF |
link.rule.ids | 230,309,786,891,25594,76903 |
linkProvider | European Patent Office |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwfV3fT8IwEG4IGvFNUeMP1CaavS0yNjb3QMxoOzZlG4GO8EboKImJGURm_Pe9VVCeeGt6yeXa5Ov1u95dEXrMsqaQi7bUpSmBoMxbLmDOmOmOLe2FsbCdTKhsi9gOUut10p5U0Me2Fkb1Cf1WzREBURngvVDn9eo_iEVVbuX6SbzD1PLF5x2qbdmxU7a51Gi3wwYJTYhGSCcdafFQyeCUfm5aHnClAwdIoSJL425Zl7LadSr-CTocgL68OEUVmddRjWz_Xqujo2jz5A3DDfrWZ3CxTvoh1Ufc4wyHkdcL4x6mbBwShr2Y4ojxIKEYeB2OvDj1PcLTMtkB84ANWeKfowefcRLoYMn0b-HTdLRrtnmBqvkyl5cISzsTrnBskVllXouYtYTbnButsjDcMIW8Qo19mq73i-9RLeBRf9oP47cbdPwbzXR1w2ygavH5JW_BDRfiTu3eDyIuhC8 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Apatent&rft.title=SOLID-STATE+IMAGING+DEVICE+AND+METHOD+FOR+MANUFACTURING+THEREOF&rft.inventor=SASAKI+SYU&rft.inventor=KANNO+KATSUHIRO&rft.date=2007-09-13&rft.externalDBID=A1&rft.externalDocID=US2007212804A1 |