SOLID-STATE IMAGING DEVICE AND METHOD FOR MANUFACTURING THEREOF

A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer electric charge stored on the photodiode, a first inter-layer insulating film made of SiO2, a first metallic wiring layer, a second inter-lay...

Full description

Saved in:
Bibliographic Details
Main Authors SASAKI SYU, KANNO KATSUHIRO
Format Patent
LanguageEnglish
Published 13.09.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A solid-state imaging device is formed by laminating a photodiode on a surface of a Si semiconductor substrate, a gate electrode layer to read out or transfer electric charge stored on the photodiode, a first inter-layer insulating film made of SiO2, a first metallic wiring layer, a second inter-layer insulating film made of SiO2, a second metallic insulating layer, an undoped silicon glass (USG) film containing hydrogen, and a passivation film containing hydrogen, one by one. Dark currents are reduced by exhausting hydrogen atoms in the USG film and the passivation film for bonding it with dangling bonds on the surface of the Si semiconductor substrate, while applying heat treatments to the imaging device at a temperature of 400° C. or higher.
Bibliography:Application Number: US20070685406