Memory device with reduced word line resistance

• Main Authors: KIM DU-EUNG, CHO BEAK-HYUNG
• Format: Patent
• Language: English
• Published: 16.08.2007
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

A memory device includes a plurality of blocks, with each block having a respective array of memory cells and respective local word lines. The memory device also includes a respective switching device coupled between each local word line and a common voltage node. A global word line driver controls...