METHOD FOR DOUBLE-SIDED PROCESSING OF THIN FILM TRANSISTORS

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating bac...

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Bibliographic Details
Main Authors ERIKSSON MARK A, WANG GUOGONG, LAGALLY MAX G, MA ZHENQIANG, EVANS PAUL G, YUAN HAOIH
Format Patent
LanguageEnglish
Published 16.08.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Bibliography:Application Number: US20060276065