NITRIDE-BASED SEMICONDUCTOR DEVICE

A nitride-based semiconductor device includes a diode provided on a semiconductor substrate. The diode contains a first nitride-based semiconductor layer made of non-doped AlXGa1-XN (0<=X<1); a second nitride-based semiconductor layer made of non-doped or n-type AlYGa1-YN (0<=Y<=1, X<...

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Bibliographic Details
Main Author KURAGUCHI MASAHIKO
Format Patent
LanguageEnglish
Published 28.06.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A nitride-based semiconductor device includes a diode provided on a semiconductor substrate. The diode contains a first nitride-based semiconductor layer made of non-doped AlXGa1-XN (0<=X<1); a second nitride-based semiconductor layer made of non-doped or n-type AlYGa1-YN (0<=Y<=1, X<Y) having a lattice constant smaller than that of the first nitride-based semiconductor layer; a first electrode formed on the second nitride-based semiconductor layer; a second electrode formed on the second nitride-based semiconductor layer; and an insulating film that covers the second nitride-based semiconductor layer below a peripheral portion of the first electrode. In the diode, a recess structure portion is formed at a position near the peripheral portion of the first electrode on the second nitride-based semiconductor layer, and the first electrode covers the second nitride-based semiconductor layer and at least a part of the insulating film.
Bibliography:Application Number: US20060564571