Method of forming pattern

• Main Author: KAWAKAMI YUKIYA
• Format: Patent
• Language: English
• Published: 10.05.2007
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CINEMATOGRAPHY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS

Formation of a constricted portion in an interconnect pattern is inhibited while moderating design rule for a phase shifting mask. When an interconnect pattern including a plurality of straight lines that are arranged in parallel is formed in a photoresist film on or over a wafer, the process thereof comprises: providing different phase apertures 114 and 116 in longitudinal external side of the interconnect apertures 110 and 112 in the phase shifting mask 100 , the different phase aperture providing a phase of light that is different from a phase of light through the interconnect apertures 110 and 112 ; transferring a basic pattern in the photoresist film via an exposure by using the phase shifting mask 100 , the basic pattern containing the interconnect pattern and a temporary pattern formed from an end of the interconnect pattern toward a longitudinal external side thereof; and transferring a temporary pattern in the photoresist for removing the temporary pattern from the basic pattern via an exposure by using a trim mask.