Method of forming pattern

Formation of a constricted portion in an interconnect pattern is inhibited while moderating design rule for a phase shifting mask. When an interconnect pattern including a plurality of straight lines that are arranged in parallel is formed in a photoresist film on or over a wafer, the process thereo...

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Bibliographic Details
Main Author KAWAKAMI YUKIYA
Format Patent
LanguageEnglish
Published 10.05.2007
Subjects
APPARATUS SPECIALLY ADAPTED THEREFOR
CINEMATOGRAPHY
ELECTROGRAPHY
HOLOGRAPHY
MATERIALS THEREFOR
ORIGINALS THEREFOR
PHOTOGRAPHY
PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES
PHYSICS
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Summary:Formation of a constricted portion in an interconnect pattern is inhibited while moderating design rule for a phase shifting mask. When an interconnect pattern including a plurality of straight lines that are arranged in parallel is formed in a photoresist film on or over a wafer, the process thereof comprises: providing different phase apertures 114 and 116 in longitudinal external side of the interconnect apertures 110 and 112 in the phase shifting mask 100 , the different phase aperture providing a phase of light that is different from a phase of light through the interconnect apertures 110 and 112 ; transferring a basic pattern in the photoresist film via an exposure by using the phase shifting mask 100 , the basic pattern containing the interconnect pattern and a temporary pattern formed from an end of the interconnect pattern toward a longitudinal external side thereof; and transferring a temporary pattern in the photoresist for removing the temporary pattern from the basic pattern via an exposure by using a trim mask.
Bibliography:Application Number: US20060593543