Chemical mechanical polishing slurry compositions, methods of preparing the same and methods of using the same

Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a pH-adjusting agent; (c) a fluorinated surfactant; and (d) a quaternary ammonium surfactant. In some embodiments...

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Bibliographic Details
Main Authors LEE IN K, CHOUNG JAE H
Format Patent
LanguageEnglish
Published 10.05.2007
Subjects
GRINDING
PERFORMING OPERATIONS
POLISHING
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
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Summary:Provided herein are chemical mechanical polishing (CMP) slurries and methods for producing the same. Embodiments of the invention include CMP slurries that include (a) a metal oxide; (b) a pH-adjusting agent; (c) a fluorinated surfactant; and (d) a quaternary ammonium surfactant. In some embodiments, the fluorinated surfactant is a non-ionic perfluoroalkyl sulfonyl compound. Also provided herein are methods of polishing a polycrystalline silicon surface, including providing a slurry composition according to an embodiment of the invention to a polycrystalline silicon surface and performing a CMP process to polish the polycrystalline silicon surface.
Bibliography:Application Number: US20060603808