Manufacturing method of semiconductor device
A semiconductor device manufacturing method involves heating up a solution containing sulfuric acid and hydrogen peroxide solution, replenishing the solution with a predetermined quantity of sulfuric acid and a predetermined quantity of hydrogen peroxide solution at a predetermined interval, maintai...
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Main Authors | , , , |
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Format | Patent |
Language | English |
Published |
26.04.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A semiconductor device manufacturing method involves heating up a solution containing sulfuric acid and hydrogen peroxide solution, replenishing the solution with a predetermined quantity of sulfuric acid and a predetermined quantity of hydrogen peroxide solution at a predetermined interval, maintaining a concentration of the sulfuric acid in the solution at a predetermined concentration level or higher, immersing the semiconductor substrate in the solution, and cleaning the semiconductor substrate. |
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Bibliography: | Application Number: US20060446304 |