Manufacturing method of semiconductor device

A semiconductor device manufacturing method involves heating up a solution containing sulfuric acid and hydrogen peroxide solution, replenishing the solution with a predetermined quantity of sulfuric acid and a predetermined quantity of hydrogen peroxide solution at a predetermined interval, maintai...

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Bibliographic Details
Main Authors OSUKI MASATOSHI, OH JUNJI, KASE YUKA, YAMANO MASAOMI
Format Patent
LanguageEnglish
Published 26.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device manufacturing method involves heating up a solution containing sulfuric acid and hydrogen peroxide solution, replenishing the solution with a predetermined quantity of sulfuric acid and a predetermined quantity of hydrogen peroxide solution at a predetermined interval, maintaining a concentration of the sulfuric acid in the solution at a predetermined concentration level or higher, immersing the semiconductor substrate in the solution, and cleaning the semiconductor substrate.
Bibliography:Application Number: US20060446304