Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides

An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloalip...

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Bibliographic Details
Main Authors NORMAN JOHN A.T, LEI XINJIAN
Format Patent
LanguageEnglish
Published 12.04.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.
Bibliography:Application Number: US20060522768