Systems and Methods for Controlling Deposition of a Charge on a Wafer for Measurement of One or More Electrical Properties of the Wafer

Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the...

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Bibliographic Details
Main Authors PEI SHIYOU, RZEPIELA JEFFREY A, KAGAN ALEXANDER, SHI JIANOU, EDELSTEIN SERGIO, FENG YIPING
Format Patent
LanguageEnglish
Published 29.03.2007
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Summary:Systems and methods for controlling deposition of a charge on a wafer for measurement of one or more electrical properties of the wafer are provided. One system includes a corona source configured to deposit the charge on the wafer and a sensor configured to measure one or more conditions within the corona source. This system also includes a control subsystem configured to alter one or more parameters of the corona source based on the one or more conditions. Another system includes a corona source configured to deposit the charge on the wafer and a mixture of gases disposed within a discharge chamber of the corona source during the deposition of the charge. The mixture of gases alters one or more parameters of the charge deposited on the wafer.
Bibliography:Application Number: US20060465893