Memory cell having p-type pass device

• Main Authors: ZHENG BO, SOMASEKHAR DINESH, KHELLAH MUHAMMAD M, DE VIVEK K, ZHANG KEVIN, KIM NAM S, YE YIBIN
• Format: Patent
• Language: English
• Published: 15.03.2007
• Subjects: GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; INFORMATION STORAGE; PHYSICS; STATIC STORES; TECHNICAL SUBJECTS COVERED BY FORMER USPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ARTCOLLECTIONS [XRACs] AND DIGESTS

For one disclosed embodiment, an apparatus comprises a first p-type device coupled between a cell voltage node and a storage node, an n-type device coupled between the storage node and a reference voltage node, and a second p-type device to couple the storage node to a bit line in response to a signal on a select line. At least one side of diffusion regions in a substrate to form both the first p-type device and the second p-type device are substantially aligned. Other embodiments are also disclosed.