SOURCE SIDE INJECTION STORAGE DEVICE WITH SPACER GATES AND METHOD THEREFOR

A storage device structure ( 10 ) has two bits of storage per control gate ( 34 ) and uses source side injection (SSI) to provide lower programming current. A control gate ( 34 ) overlies a drain electrode formed by a doped region ( 22 ) that is positioned in a semiconductor substrate ( 12 ). Two se...

Full description

Saved in:
Bibliographic Details
Main Authors HONG CHEONG M, CHINDALORE GOWRISHANKAR L
Format Patent
LanguageEnglish
Published 25.01.2007
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A storage device structure ( 10 ) has two bits of storage per control gate ( 34 ) and uses source side injection (SSI) to provide lower programming current. A control gate ( 34 ) overlies a drain electrode formed by a doped region ( 22 ) that is positioned in a semiconductor substrate ( 12 ). Two select gates ( 49 and 50 ) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate ( 34 ). A source doped region ( 60 ) is positioned in the semiconductor substrate ( 12 ) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer ( 42 ) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists.
Bibliography:Application Number: US20060536099