SOURCE SIDE INJECTION STORAGE DEVICE WITH SPACER GATES AND METHOD THEREFOR
A storage device structure ( 10 ) has two bits of storage per control gate ( 34 ) and uses source side injection (SSI) to provide lower programming current. A control gate ( 34 ) overlies a drain electrode formed by a doped region ( 22 ) that is positioned in a semiconductor substrate ( 12 ). Two se...
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Main Authors | , |
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Format | Patent |
Language | English |
Published |
25.01.2007
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Subjects | |
Online Access | Get full text |
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Summary: | A storage device structure ( 10 ) has two bits of storage per control gate ( 34 ) and uses source side injection (SSI) to provide lower programming current. A control gate ( 34 ) overlies a drain electrode formed by a doped region ( 22 ) that is positioned in a semiconductor substrate ( 12 ). Two select gates ( 49 and 50 ) are implemented with conductive sidewall spacers adjacent to and lateral to the control gate ( 34 ). A source doped region ( 60 ) is positioned in the semiconductor substrate ( 12 ) adjacent to one of the select gates for providing a source of electrons to be injected into a storage layer ( 42 ) underlying the control gate. Lower programming results from the SSI method of programming and a compact memory cell size exists. |
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Bibliography: | Application Number: US20060536099 |