Methods of programming silicon oxide nitride oxide semiconductor (SONOS) memory devices

A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity reg...

Full description

Saved in:
Bibliographic Details
Main Authors HYUN JAE-WOONG, KIM JU-HYUNG, KIM CHUNG-WOO, HAN JEONG-HEE, JEONG YOUN-SEOK, CHAE HEE-SOON
Format Patent
LanguageEnglish
Published 28.12.2006
Subjects
ELECTRICITY
INFORMATION STORAGE
PHYSICS
STATIC STORES
Online AccessGet full text

Cover

More Information
Summary:A method of programming a silicon oxide nitride oxide semiconductor (SONOS) memory device is provided. The SONOS memory device includes a substrate, first and second impurity regions spaced apart on the substrate, a gate oxide layer formed over the substrate between the first and second impurity regions, a trap layer formed over the gate oxide layer, an insulation layer formed over the trap layer, and a gate electrode formed over the insulation layer. The method of programming the SONOS device includes writing data into the SONOS memory device by applying a first voltage to the first impurity region, a gate voltage to the gate electrode, and a second voltage to the second impurity region, where the second voltage is a negative voltage.
Bibliography:Application Number: US20060432375