Active region of a light emitting device optimized for increased modulation speed operation

In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well...

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Bibliographic Details
Main Authors DJORDJEV KOSTADIN, TAN MICHAEL R, TANDON ASHISH, LIN CHAO-KUN
Format Patent
LanguageEnglish
Published 07.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
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Summary:In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
Bibliography:Application Number: US20050143374