Method of manufacturing semiconductor device

According to an aspect of the invention, there is provided a method of manufacturing a semiconductor device including simultaneously supplying a source gas of an oxide insulating film and H2 to a semiconductor substrate when the oxide insulating film is formed on the semiconductor substrate by a CVD...

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Bibliographic Details
Main Authors NATORI KATSUAKI, TANAKA MASAYUKI
Format Patent
LanguageEnglish
Published 07.12.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:According to an aspect of the invention, there is provided a method of manufacturing a semiconductor device including simultaneously supplying a source gas of an oxide insulating film and H2 to a semiconductor substrate when the oxide insulating film is formed on the semiconductor substrate by a CVD method.
Bibliography:Application Number: US20060443275