Chemical vapor deposited film based on a plasma cvd method and method of forming the film

• Main Authors: INAGAKI HAJIME, KURASHIMA HIDEO, IEKI TOSHIHIDE, KOBAYASHI AKIRA, HOSONO HIROKO, NAMIKI TSUNEHISA
• Format: Patent
• Language: English
• Published: 23.11.2006
• Subjects: APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TO SURFACES, IN GENERAL; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PERFORMING OPERATIONS; PROCESSES FOR APPLYING LIQUIDS OR OTHER FLUENT MATERIALS TOSURFACES, IN GENERAL; SEMICONDUCTOR DEVICES; SPRAYING OR ATOMISING IN GENERAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; TRANSPORTING

A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feeding an organosilicon compound and an oxidizing gas into the treating chamber, wherein the rate of feeding the oxidizing gas is varied while maintaining constant the rate of feeding the organosilicon compound gas into the plasma-treating chamber during the formation of the vapor deposited film. A chemical vapor deposited film is formed featuring excellent adhesiveness, softness, flexibility, oxygen-barrier property and water-barrier property.