CMP PROCESS OF HIGH SELECTIVITY

• Main Authors: YANG KAI-GIN, LIN CHUN-HSIEN, WEI YUNG-TSUNG, LEE CHIH-YUEH
• Format: Patent
• Language: English
• Published: 09.11.2006
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMISTRY; DECORATIVE ARTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GLASS; GRINDING; JOINING GLASS TO GLASS OR OTHER MATERIALS; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; METALLURGY; MINERAL OR SLAG WOOL; MOSAICS; PAPERHANGING; PERFORMING OPERATIONS; POLISHING; PRODUCING DECORATIVE EFFECTS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; TARSIA WORK; TRANSPORTING

A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry are then used together to polish the substrate, wherein the high-selectivity slurry has a higher selectivity to the first material than to the second material.