CMP PROCESS OF HIGH SELECTIVITY

A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry a...

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Bibliographic Details
Main Authors YANG KAI-GIN, LIN CHUN-HSIEN, WEI YUNG-TSUNG, LEE CHIH-YUEH
Format Patent
LanguageEnglish
Published 09.11.2006
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS
CHEMISTRY
DECORATIVE ARTS
DRESSING OR CONDITIONING OF ABRADING SURFACES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GLASS
GRINDING
JOINING GLASS TO GLASS OR OTHER MATERIALS
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
METALLURGY
MINERAL OR SLAG WOOL
MOSAICS
PAPERHANGING
PERFORMING OPERATIONS
POLISHING
PRODUCING DECORATIVE EFFECTS
SEMICONDUCTOR DEVICES
SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS
SURFACE TREATMENT OF GLASS
TARSIA WORK
TRANSPORTING
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Summary:A CMP process of high selectivity is described. A substrate having a first material and a second material thereon is provided. A polishing pad that has multiple first grooves and multiple second grooves crossing the first grooves thereon is provided. The polishing pad and a high-selectivity slurry are then used together to polish the substrate, wherein the high-selectivity slurry has a higher selectivity to the first material than to the second material.
Bibliography:Application Number: US20050908337