Slurry composition for secondary polishing of silicon wafer

Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2~10 weight % of colloidal silica having an average particle size of 30~80 nm; 0.5~1.5 % by weight of ammonia; 0.2~1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.0...

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Bibliographic Details
Main Authors ROH HYUN S, LEE IN K, LEE KILL S, PARK TAE W
Format Patent
LanguageEnglish
Published 02.11.2006
Subjects
ADHESIVES
BASIC ELECTRIC ELEMENTS
CHEMISTRY
DRESSING OR CONDITIONING OF ABRADING SURFACES
DYES
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FORELSEWHERE
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NANOTECHNOLOGY
NATURAL RESINS
PAINTS
PERFORMING OPERATIONS
POLISHES
POLISHING
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SEMICONDUCTOR DEVICES
SKI WAXES
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TOOLS FOR GRINDING, BUFFING, OR SHARPENING
TRANSPORTING
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Summary:Disclosed is a slurry composition for secondary polishing of silicon wafers comprising: 2~10 weight % of colloidal silica having an average particle size of 30~80 nm; 0.5~1.5 % by weight of ammonia; 0.2~1 weight % of a hydroxyalkycellulose-based polymer for modifying rheology of the composition; 0.03~0.5 weight % of a polyoxyethylenealkylamine ether-based nonionic surfactant; 0.01~1 weight % of a quaternary ammonium base and the balance of deionized water.
Bibliography:Application Number: US20030531125