Semiconductor device having oxidized metal film and manufacture method of the same

A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal...

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Main Authors SAKATA ATSUKO, KATATA TOMIO, HATANO MASAAKI, YAMASHITA SOICHI, HIGASHI KAZUYUKI, WADA JUNICHI, KINOSHITA KAZUYA, HASUNUMA MASAHIKO, YAMADA MASAKI, OMOTO SEIICHI, NAKAMURA NAOFUMI
Format Patent
LanguageEnglish
Published 28.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for manufacturing a semiconductor device includes heating a substrate having an insulation film thereon to a first substrate temperature so that oxidizing species are emitted from the insulating film, the insulating film having a recessed portion formed in a surface thereof, forming a metal film on the insulating film at a second substrate temperature lower than the first substrate temperature, and oxidizing at least part of the metal film with oxidizing species remaining in the insulating film.
Bibliography:Application Number: US20060335584