Semiconductor device having fuse pattern and methods of fabricating the same

A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a fuse pattern formed on the first insulating layer in the fuse region, the fuse pattern including a first...

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Bibliographic Details
Main Authors LEE KUN-GU, CHO TAI-HEUI
Format Patent
LanguageEnglish
Published 28.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device includes a semiconductor substrate having a fuse region and an interconnection region, a first insulating layer formed in the fuse region and the interconnection region, a fuse pattern formed on the first insulating layer in the fuse region, the fuse pattern including a first conductive pattern and a first capping pattern, an interconnection pattern formed on the first insulating layer in the interconnection region, including a second conductive pattern and a second capping pattern, and having a thickness greater than the thickness of the fuse pattern, and a second insulating layer formed on the first insulating layer and covering the fuse pattern.
Bibliography:Application Number: US20060387158