Non-volatile memory structure and method of fabrication

A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask columns, generating bit lines in...

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Bibliographic Details
Main Authors SHAPPIR ASSAF, IRANI RUSTOM, LUSKY ELI, EITAN BOAZ
Format Patent
LanguageEnglish
Published 21.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A method for creating a non-volatile memory array includes implanting pocket implants in a substrate at least between mask columns of a given width and at least through an ONO layer covering the substrate, generating increased-width polysilicon columns from the mask columns, generating bit lines in the substrate at least between the increased-width polysilicon columns and depositing oxide at least between the polysilicon columns.
Bibliography:Application Number: US20060440624