Method of eliminating photoresist poisoning in damascene applications
A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and car...
Saved in:
Main Authors | , , , |
---|---|
Format | Patent |
Language | English |
Published |
14.09.2006
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer. |
---|---|
Bibliography: | Application Number: US20060407758 |