Semiconductor device and its manufacturing method

A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide...

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Bibliographic Details
Main Authors LEE YUOU, HSU HUNG-YI, SHIH YEAUNG, CHUNG HSIANG-HSIEN, CHENG TSUNGI, KUO CHING-YEH, CHANG JUIUNG, TSAO WEN-KUANG
Format Patent
LanguageEnglish
Published 07.09.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A semiconductor device and its manufacturing method are disclosed. The nitrogen flow is gradually changed to form a semiconductor device with a gate or a source/drain having a nitrified gradient layer structure. Different extents of nitrification inside the nitrified gradient layer structure provide protection and buffering to prevent the undercut after etching due to different materials in the multilayer structure or the interface effect.
Bibliography:Application Number: US20050070216