Semiconductor device and manufacturing method thereof

• Main Authors: YAMAGUCHI SHINJI, ONO ATSUSHI, ASAZU TAKURO
• Format: Patent
• Language: English
• Published: 20.07.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

A semiconductor device of the present invention is furnished with (a) a first protection film, formed on a substrate, having an opening section on an electrode pad, (b) a protrusion electrode, connected on the electrode pad at the opening section, whose peripheral portion is formed to overlap the first protection film, (c) a second protection film, formed to cover at least a gap at a boundary portion of the first protection film and the protrusion electrode, having an opening on a top area of the protrusion electrode except a portion around the boundary portion of the first protection film and the protrusion electrode, and (d) a coating layer formed to cover a surface of the protrusion electrode at the opening of the second protection film. With this arrangement, it is possible to provide a semiconductor device wherein the protrusion electrode is formed with an electroless plating method, capable of preventing the lowering of the adhesion strength of the protrusion electrode to the electrode pad.