Substrate-processing apparatus and method of producing a semiconductor device

• Main Authors: MAEDA KIYOHIKO, HISAKADO SADAO, MORITA SHINYA, TANIYAMA TOMOSHI, TAKASHIMA YOSHIKAZU, OZAKI TAKASHI, UNAMI HIROSHI
• Format: Patent
• Language: English
• Published: 13.07.2006
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

A CVD device has a reaction furnace ( 39 ) for processing a wafer ( 1 ); a seal cap ( 20 ) for sealing the reaction furnace ( 39 ) hermetically; an isolation flange ( 42 ) opposite to the seal cap ( 20 ); a small chamber ( 43 ) formed by the seal cap ( 20 ), the isolation flange ( 42 ), and the wall surface in the reaction furnace ( 39 ); a feed pipe ( 19 b) for supplying a first gas to the small chamber ( 43 ); an outflow passage ( 42 a) provided in the small chamber ( 43 ) for allowing the first gas to flow into the reaction furnace ( 39 ); and a feed pipe ( 19 a) provided downstream from the outflow passage ( 42 a) for supplying a second gas into the reaction furnace ( 39 ). Byproducts such as NH4Cl are prevented from adhering to low temperature sections such as the furnace opening and therefore the semiconductor device production yield is therefore increased.