LOCOS-based junction-pinched schottky rectifier and its manufacturing methods

• Main Author: WU CHING-YUAN
• Format: Patent
• Language: English
• Published: 22.06.2006
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

The LOCOS-based junction-pinched Schottky rectifier comprises a raised diffusion guard ring surrounded by an outer LOCOS field oxide layer, a raised diffusion grid or a plurality of raised diffusion rings or stripes surrounded by the raised diffusion guard ring, a plurality of recessed semiconductor surfaces formed on a lightly-doped epitaxial semiconductor layer surrounded by the raised diffusion guard ring and the raised diffusion grid or by the raised diffusion guard ring and the plurality of raised diffusion rings or stripes, and a metal silicide layer or a metal layer being at least formed over a portion of the raised diffusion guard ring, the plurality of recessed semiconductor surfaces and the raised diffusion grid or the plurality of raised diffusion rings or stripes. A plurality of compensated diffusion layers can be formed in surface portions of the lightly-doped epitaxial semiconductor layer under the plurality of recessed semiconductor surfaces.