FORMING OF HIGH ASPECT RATIO CONDUCTIVE STRUCTURE

Methods of forming a conductive structure on a substrate prior to packaging, and a test probe structure generated according to the method, are disclosed. The conductive structure includes a high aspect ratio structure formed by injected molded solder. The invention can be applied to form passive ele...

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Bibliographic Details
Main Authors GROVES ROBERT A, VOLANT RICHARD P, GRUBER PETER A, PETRARCA KEVIN S, WALKER GEORGE F
Format Patent
LanguageEnglish
Published 15.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Methods of forming a conductive structure on a substrate prior to packaging, and a test probe structure generated according to the method, are disclosed. The conductive structure includes a high aspect ratio structure formed by injected molded solder. The invention can be applied to form passive elements and interconnects on a conventional semiconductor substrate after the typical BEOL, and prior to packaging. The method may provide better electromigration characteristics, lower resistivity, and higher Q factors for conductive structures. In addition, the method is backwardly compatible and customizable.
Bibliography:Application Number: US20040905013