Semiconductor device and method for manufacturing the same

The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another...

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Bibliographic Details
Main Authors AHN JIN H, KIM YIL W, LEE SANG D
Format Patent
LanguageEnglish
Published 08.06.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention discloses improved semiconductor device and method for manufacturing wherein one side of a source and drain region and a portion of a channel region are disposed on a buried oxide layer formed on a semiconductor substrate and the side of the source and drain region and another portion of the channel region are disposed on a Si epitaxial layer formed on a semiconductor substrate.
Bibliography:Application Number: US20050165178