Planarization with reduced dishing

• Main Authors: CUI HAO, CATABAY WILBUR G, HSIA WEI-JEN
• Format: Patent
• Language: English
• Published: 08.06.2006
• Subjects: APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL COMPOSITION OF GLASSES, GLAZES, OR VITREOUSENAMELS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DECORATIVE ARTS; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; GLASS; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; JOINING GLASS TO GLASS OR OTHER MATERIALS; MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR; METALLURGY; MINERAL OR SLAG WOOL; MOSAICS; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; PAPERHANGING; PERFORMING OPERATIONS; PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS; PRODUCING DECORATIVE EFFECTS; SEMICONDUCTOR DEVICES; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS,MINERALS OR SLAGS; SURFACE TREATMENT OF GLASS; TARSIA WORK; TRANSPORTING; WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OFELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKESTHE PLACE OF A TOOL

A method of forming a planarized layer on a substrate, where the substrate is cleaned, and the layer is formed having a surface with high portions and low portions. A resistive mask is formed over the low portions of the layer, but not over the high portions of the layer. The surface of the layer is etched, where the high portions of the layer are exposed to the etch, but the low portions of the layer underlying the resistive mask are not exposed to the etch. The etch of the surface of the layer is continued until the high portions of the layer are at substantially the same level as the low portions of the layer, thereby providing an initial planarization of the surface of the layer. The resistive mask is removed from the surface of the layer, and all of the surface of the layer is planarized to provide a planarized layer.