Semiconductor integrated circuit

A semiconductor integrated circuit comprising: a pair of MOS transistors which are formed in a same well on a semiconductor substrate and arranged adjacent to each other with a distance such that charge exchange between capacitances of respective drain diffusion layers is possible; and a wiring stru...

Full description

Saved in:
Bibliographic Details
Main Authors KAJIGAYA KAZUHIKO, OTSUKA KANJI
Format Patent
LanguageEnglish
Published 25.05.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A semiconductor integrated circuit comprising: a pair of MOS transistors which are formed in a same well on a semiconductor substrate and arranged adjacent to each other with a distance such that charge exchange between capacitances of respective drain diffusion layers is possible; and a wiring structure which is formed to apply differential signals to respective gates of the pair of MOS transistors and to apply a common potential to respective sources of the pair of MOS transistors.
Bibliography:Application Number: US20050281743