Aspect ratio controlled etch selectivity using time modulated DC bias voltage

A modulated bias power etching method for etching a substrate is disclosed. The method alternatively deposits and etches material from a low aspect area of an integrated circuit device to form a static area while etching material from a high aspect area. The modulation pulse period and repetition ra...

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Bibliographic Details
Main Authors ABATCHEV MIRZAFER, DONOHOE KEVIN G, VELTROP ROBERT
Format Patent
LanguageEnglish
Published 18.05.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A modulated bias power etching method for etching a substrate is disclosed. The method alternatively deposits and etches material from a low aspect area of an integrated circuit device to form a static area while etching material from a high aspect area. The modulation pulse period and repetition rate are adjusted to permit deposition at low aspect ratio and very little or no deposition at high aspect ratio during the deposition cycle and to permit etching of the material deposited on the low aspect ratio area and etching of the material in the high aspect ratio area during the etching cycle.
Bibliography:Application Number: US20050319402