Radio-frequency switch circuit and semiconductor device

Switch sections composed of a plurality of FETs 111 to 118 and 121 to 128 connected in series are provided between input/output terminals 161 and 162 and ground terminals 181 and 182 , and between the input/output terminals 161 to 163 . A plurality of gate bias resistors 131 to 138, 141 to 148 are a...

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Bibliographic Details
Main Authors NAKATSUKA TADAYOSHI, MIYAGI MASASHI
Format Patent
LanguageEnglish
Published 18.05.2006
Subjects
BASIC ELECTRIC ELEMENTS
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
PULSE TECHNIQUE
RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
WAVEGUIDES
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Summary:Switch sections composed of a plurality of FETs 111 to 118 and 121 to 128 connected in series are provided between input/output terminals 161 and 162 and ground terminals 181 and 182 , and between the input/output terminals 161 to 163 . A plurality of gate bias resistors 131 to 138, 141 to 148 are also provided. One terminal of each gate bias resistor is connected to a gate electrode of a corresponding one of the FETs 111 to 118 and 121 to 128 , while a control voltage 171 and 172 for switching an ON state and an OFF state of the switch section is applied to the other terminal. Among the FETs included in each switch section, concerning the FETs 114, 115, 124 , and 125 to which signal power is applied when the switch section is in the OFF state, the gate bias resistors 134, 135, 144 , and 145 connected to the gate electrodes are set to have a highest resistance value.
Bibliography:Application Number: US20050280247