Method for photoresist stripping and treatment of low-k dielectric material

A plasma processing operation uses a gas mixture of N2 and H2 to both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresis...

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Bibliographic Details
Main Authors SU YI-NIEN, TAO HUN-JAN, HSU PENG-FU, TSAI JANG-SHIANG, KO CHUNGI, SHIEH JYU-HORNG
Format Patent
LanguageEnglish
Published 23.03.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A plasma processing operation uses a gas mixture of N2 and H2 to both remove a photoresist film and treat a low-k dielectric material. The plasma processing operation prevents degradation of the low-k material by forming a protective layer on the low-k dielectric material. Carbon from the photoresist layer is activated and caused to complex with the low-k dielectric, maintaining a suitably high carbon content and a suitably low dielectric constant. The plasma processing operation uses a gas mixture with H2 constituting at least 10%, by volume, of the gas mixture.
Bibliography:Application Number: US20040949128