Ion implantation apparatus and method for implanting ions by using the same

Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, includes: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion...

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Bibliographic Details
Main Authors JIN SEUNG-WOO, ROUH KYOUNG-BONG, LEE MIN-YONG
Format Patent
LanguageEnglish
Published 02.02.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed are an ion implantation apparatus and a method for implanting ions by using the same. The ion implanter for implanting ions into a wafer, includes: a first quadrupole magnet assembly for focusing an ion beam transmitted from an ion beam source; a scanner for deflecting the transmitted ion beam in the directions of an X-axis and an Y-axis; a second quadrupole magnet assembly for converging and diverging the ion beam passing through the scanner in the directions of the X- and Y-axes; and a beam parallelizer for rotating the ion beam in synchronization with the second quadrupole magnet assembly, thereby implanting the ion beam into the wafer.
Bibliography:Application Number: US20040028003