Method for manufacturing semiconductor device

A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the pl...

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Bibliographic Details
Main Authors ZHUANG HAOREN, TOMIOKA KAZUHIRO
Format Patent
LanguageEnglish
Published 12.01.2006
Subjects
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
ELECTROLYTIC OR ELECTROPHORETIC PROCESSES
METALLURGY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROMOBJECTS
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:A method for manufacturing a semiconductor device including a substrate to be processed having a conductive layer essentially consisting of platinum includes etching the conductive layer, and generating plasma and cleaning the substrate, to which an etching product adhere, by means of ions in the plasma. The cleaning includes heating the substrate to a first temperature, introducing gas, which contains chlorine and nitrogen and in which a ratio of chlorine atoms to nitrogen atoms is 9:1 to 5:5, and applying high-frequency power to an electrode, on which the substrate is placed.
Bibliography:Application Number: US20040886668