Flash memory cells with reduced distances between cell elements

An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope downward at an angle determined by the thickness of the ARC. The etching process could include CF4 chemist...

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Bibliographic Details
Main Authors MAY FRANCES, VELTROP ROBERT, LINDSAY ROGER W
Format Patent
LanguageEnglish
Published 05.01.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:An anti-reflective coating (ARC) is formed over the various layers involved in a cell fabrication process. The ARC is selectively etched such that the edges of the etched areas of the ARC slope downward at an angle determined by the thickness of the ARC. The etching process could include CF4 chemistry. The inner edges of the sloped ARC areas reduce the original photo-defined space since the underlying layers are now defined by the sloped edges.
Bibliography:Application Number: US20040881042