Conductive compound cap layer

An interconnect structure and method thereof comprising: a interconnect and a compound cap layer. The interconnect has a compound cap layer thereover. The interconnect is preferably comprised of copper. The compound cap layer is preferably comprised of a copper-metal (Cu-Me) compound or a metal; and...

Full description

Saved in:
Bibliographic Details
Main Authors LEE TAE J, HSIA LIANG CHOO, ZHANG FAN
Format Patent
LanguageEnglish
Published 05.01.2006
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:An interconnect structure and method thereof comprising: a interconnect and a compound cap layer. The interconnect has a compound cap layer thereover. The interconnect is preferably comprised of copper. The compound cap layer is preferably comprised of a copper-metal (Cu-Me) compound or a metal; and is more preferably comprised of a Cu-Sn compound or Ni metal. A dielectric cap layer is formed over the compound cap layer. The compound cap layer can provide a barrier capping effect to the Cu to minimize the out-diffusion of Cu and therefore improve the electro-migration performance of Cu. The compound cap layer has excellent adhesion to dielectric cap layers, especially SiN and SiC dielectric cap layers.
Bibliography:Application Number: US20040882855