Etching reaction device with protrusions

An etching reaction device ( 3 ) includes an etching reaction chamber ( 30 ), and a number of protrusions ( 301 ) arranged on the bottom of the etching reaction chamber. Thus it can economize the etching time and quickly complement the concentration of the etching liquid near to a wafer ( 7 ). The p...

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Bibliographic Details
Main Authors HUANG CHING-FENG, HUANG CHANG K, GAU SHENGOU, OU CHEN-HSIEN, HUANG JUNG-LUNG, HUANG CHIH H
Format Patent
LanguageEnglish
Published 22.12.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE
SEMICONDUCTOR DEVICES
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Summary:An etching reaction device ( 3 ) includes an etching reaction chamber ( 30 ), and a number of protrusions ( 301 ) arranged on the bottom of the etching reaction chamber. Thus it can economize the etching time and quickly complement the concentration of the etching liquid near to a wafer ( 7 ). The protrusions can reduce the capability of the etching reaction chamber, thus it can economize the etching liquid.
Bibliography:Application Number: US20050156275