Method for manufacturing semiconductor device

The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so th...

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Bibliographic Details
Main Authors YAZAKI NAOMI, NISHIKAWA TOMOKO, ASANO ETSUKO, YAMAGUCHI TETSUJI, FUTAMURA TOMOYA
Format Patent
LanguageEnglish
Published 10.11.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:The present invention provides a method for manufacturing a semiconductor device having high characteristic and reliability. The etching damage during dry etching after forming an electrode or a wiring over an insulating film is prevented. The damage is suppressed by forming a conductive layer so that charged particles due to plasma during dry etching are not generated in a semiconductor layer. Accordingly, it is an object of the invention to provide a method not for generating the deterioration of the transistor characteristic especially in a thin film transistor having a minute structure.
Bibliography:Application Number: US20050121110