Nonlithographic method to produce self-aligned mask, articles produced by same and compositions for same

A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking mater...

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Main Authors SANKARAPANDIAN MUTHUMANICKAM, HEDRICK JEFFREY C, HUANG ELBERT, GATES STEPHEN M, NITTA SATYANARAYANA V, PURUSHOTHAMAN SAMPATH, COLBURN MATTHEW E
Format Patent
LanguageEnglish
Published 20.10.2005
Edition7
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Summary:A method for forming a self aligned pattern on an existing pattern on a substrate comprising applying a coating of a solution containing a masking material in a carrier, the masking material having an affinity for portions of the existing pattern; and allowing at least a portion of the masking material to preferentially assemble to the portions of the existing pattern. The pattern may be comprised of a first set of regions of the substrate having a first atomic composition and a second set of regions of the substrate having a second atomic composition different from the first composition. The first set of regions may include one or more metal elements and the second set of regions may include a dielectric. The first and second regions may be treated to have different surface properties. Structures made in accordance with the method. Compositions useful for practicing the method.
Bibliography:Application Number: US20050143793