Semiconductor device and method of manufacturing the same

Disclosed is a method of manufacturing a semiconductor device, comprising forming a bottom electrode film of a capacitor above a semiconductor substrate, forming a dielectric film of the capacitor on the bottom electrode film, forming a top electrode film of the capacitor on the dielectric film, and...

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Bibliographic Details
Main Authors YAMAKAWA KOJI, NATORI KATSUAKI, KANAYA HIROYUKI
Format Patent
LanguageEnglish
Published 18.08.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:Disclosed is a method of manufacturing a semiconductor device, comprising forming a bottom electrode film of a capacitor above a semiconductor substrate, forming a dielectric film of the capacitor on the bottom electrode film, forming a top electrode film of the capacitor on the dielectric film, and forming a hydrogen barrier film after forming the top electrode film, the hydrogen barrier film preventing hydrogen from diffusing into the dielectric film, wherein forming the hydrogen barrier film includes forming an oxide film containing silicon and nitriding the oxide film.
Bibliography:Application Number: US20040878051