Process for fabricating nanoelectronic device by intermittent exposure

A process for fabricating a nanoelectronic device by intermittent exposure is disclosed, consisting the steps of: providing a substrate on which a conductor or semiconductor thin film having a photoresist layer coated is formed; exposing the photoresist layer by lithography with a lithographic patte...

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Bibliographic Details
Main Authors HWANG GWO-JEN, HU SHU-FEN, FANG YI-PIN, CHOU YAANG
Format Patent
LanguageEnglish
Published 30.06.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:A process for fabricating a nanoelectronic device by intermittent exposure is disclosed, consisting the steps of: providing a substrate on which a conductor or semiconductor thin film having a photoresist layer coated is formed; exposing the photoresist layer by lithography with a lithographic pattern which includes at least one noncontinuous quantum dot, a first electrode and a second electrode, in which the noncontinuous quantum dots are linearly arranged and sandwiched between the first electrode and the second electrode; and etching the thin film to form a quantum island group of linked quantum islands having both ends connected to the first electrode and the second electrode respectively so that the width of the quantum island is larger than the width of tunnel barriers positioned on the both sides of the quantum islands. A nanoelectronic device constructed according to the process is also disclosed.
Bibliography:Application Number: US20040998603