MOS transistor having protruded-shape channel and method of fabricating the same

A MOS transistor that has a protruding portion with a favorable vertical profile and a protruded-shape channel that requires no additional photolithography process, and a method of fabricating the same are provided. A first mask that defines an isolation region of a substrate is overall etched to fo...

Full description

Saved in:
Bibliographic Details
Main Author JANG YOUNGUL
Format Patent
LanguageEnglish
Published 23.06.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online AccessGet full text

Cover

More Information
Summary:A MOS transistor that has a protruding portion with a favorable vertical profile and a protruded-shape channel that requires no additional photolithography process, and a method of fabricating the same are provided. A first mask that defines an isolation region of a substrate is overall etched to form a second mask with a smaller width than the first mask. Then, the substrate is etched to a predetermined depth while using the second mask as an etch mask, thereby forming the protruding portion. Without performing a photolithography process, the protruding portion has a favorable profile and the protruding height of an isolation layer is adjusted to be capable of appropriately performing ion implantation upon the protruding portion.
Bibliography:Application Number: US20040001805