Photolithographic patterning process using a carbon hard mask layer of diamond-like hardness produced by a plasma-enhanced deposition process
A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the p...
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Main Authors | , , , , , |
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Format | Patent |
Language | English |
Published |
26.05.2005
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Edition | 7 |
Subjects | |
Online Access | Get full text |
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Summary: | A carbon hard mask layer is applied to a substrate to be patterned by means of a plasma-enhanced deposition process in such a manner that it has a hardness comparable to that of diamond in at least one layer thickness section. During the production of this diamond-like layer thickness section, the parameters used in the deposition are set in such a manner that growth regions which are produced in a form other than diamond-like are removed again in situ by means of subsequent etching processes and that diamond-like regions which are formed are retained. |
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Bibliography: | Application Number: US20050494063 |