Manufacturing method of semiconductor device

There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom elec...

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Bibliographic Details
Main Authors YAMAKAWA KOJI, ARISUMI OSAMU, NATORI KATSUAKI, ITOKAWA HIROSHI, MOON BUM-KI, NAKAZAWA KEISUKE, IMAI KEITARO
Format Patent
LanguageEnglish
Published 31.03.2005
Edition7
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate, forming an alumina film on the underlying region, forming a hole in the alumina film, filling the hole with a bottom electrode film, forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film.
Bibliography:Application Number: US20030673262